Please use this identifier to cite or link to this item: https://hdl.handle.net/11000/30644

Interleaved, Switched Inductor and High-Gain Wide Bandgap Based Boost Converter Proposal

Title:
Interleaved, Switched Inductor and High-Gain Wide Bandgap Based Boost Converter Proposal
Authors:
Marroquí, David  
Garrigós, Ausias  
Torres, Cristian
Orts, Carlos  
Blanes, Jose M.  
Gutiérrez Mazón, roberto  
Editor:
MDPI
Department:
Departamentos de la UMH::Ingeniería de Comunicaciones
Issue Date:
2021-01-29
URI:
https://hdl.handle.net/11000/30644
Abstract:
Many applications (electric vehicles, renewable energies, low-voltage DC grids) require simple, high-power density and low-current ripple-boost converters. Traditional step-up converters are limited when large transformation ratios are involved. In this work is proposed a step-up converter that brings together the characteristics of high gain, low ripple, and high-power density. From the converter proposal, a mathematical analysis of its operation is first performed, including its static transfer function, stress of components, and voltage and current ripples. Furthermore, it provides a design example for an application of Vin = 48 V to Vo = 270 V and 500 W. For its implementation, two different wide bandgap (WBG) semiconductor models have been used, hybrid GaN cascodes and SiC MOSFETs. Finally, the experimental results of the produced prototypes are shown, and the results are discussed.
Keywords/Subjects:
boost
switched-inductor
WBG
SiC
GaN
DC/DC
LVDC
Knowledge area:
CDU: Ciencias aplicadas: Ingeniería. Tecnología
Type of document:
application/pdf
Access rights:
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
DOI:
https://doi.org/10.3390/en14040800
Appears in Collections:
Artículos Ingeniería Comunicaciones



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