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Interleaved, Switched Inductor and High-Gain Wide Bandgap Based Boost Converter Proposal

Título :
Interleaved, Switched Inductor and High-Gain Wide Bandgap Based Boost Converter Proposal
Autor :
Marroquí, David  
Garrigós, Ausias  
Torres, Cristian
Orts, Carlos  
Blanes, Jose M.  
Gutiérrez Mazón, roberto  
Editor :
MDPI
Departamento:
Departamentos de la UMH::Ingeniería de Comunicaciones
Fecha de publicación:
2021-01-29
URI :
https://hdl.handle.net/11000/30644
Resumen :
Many applications (electric vehicles, renewable energies, low-voltage DC grids) require simple, high-power density and low-current ripple-boost converters. Traditional step-up converters are limited when large transformation ratios are involved. In this work is proposed a step-up converter that brings together the characteristics of high gain, low ripple, and high-power density. From the converter proposal, a mathematical analysis of its operation is first performed, including its static transfer function, stress of components, and voltage and current ripples. Furthermore, it provides a design example for an application of Vin = 48 V to Vo = 270 V and 500 W. For its implementation, two different wide bandgap (WBG) semiconductor models have been used, hybrid GaN cascodes and SiC MOSFETs. Finally, the experimental results of the produced prototypes are shown, and the results are discussed.
Palabras clave/Materias:
boost
switched-inductor
WBG
SiC
GaN
DC/DC
LVDC
Área de conocimiento :
CDU: Ciencias aplicadas: Ingeniería. Tecnología
Tipo documento :
application/pdf
Derechos de acceso:
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
DOI :
https://doi.org/10.3390/en14040800
Aparece en las colecciones:
Artículos Ingeniería Comunicaciones



Creative Commons La licencia se describe como: Atribución-NonComercial-NoDerivada 4.0 Internacional.