Please use this identifier to cite or link to this item:
https://hdl.handle.net/11000/30262
SiC JFET/P-MOSFET cascode for SSCB and inrush current limiter in 300V DC power systems
Title:
SiC JFET/P-MOSFET cascode for SSCB and inrush current limiter in 300V DC power systems |
Authors:
Garrigós, Ausias 
Marroquí, David
Blanes, Jose M.
Torres, C.
Orts, Carlos
Casado, Pablo
Orts, Carlos
Casado, Pablo |
Department:
Departamentos de la UMH::Ciencia de Materiales, Óptica y Tecnología Electrónica |
Issue Date:
2023-06 |
URI:
https://hdl.handle.net/11000/30262 |
Abstract:
This work presents a solid-state distribution and
protection switch based on the SiC JFET/P-MOSFET cascode
structure. The concept is aimed for 300V applications, but it can
be adapted easily to other voltages. Detailed circuit design and
simulation is discussed, as well as the potential application in
300V bus voltage satellites
|
Keywords/Subjects:
SSCB
SiC JFET
P-MOSFET
cascode
current limiter
satellite
DC voltage |
Knowledge area:
CDU: Ciencias aplicadas: Ingeniería. Tecnología: Ingeniería mecánica en general. Tecnología nuclear. Electrotecnia. Maquinaria: Ingeniería eléctrica. Electrotecnia. Telecomunicaciones |
Type of document:
application/pdf |
Access rights:
info:eu-repo/semantics/openAccess |
DOI:
https://doi.org/10.1109/ISIE51358.2023.10228112 |
Appears in Collections:
Artículos CIENCIA DE LOS MATERIALES ÓPTICA Y TECNOLOGÍA ELECTRÓNICA
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