Título : Latching Current Limiter for Space Platform Power Distribution Using a Low-Voltage p-MOSFET and a Normally-ON SiC JFET |
Autor : Garrigós, Ausiàs Marroquí, David Orts Torres, Carlos Torres Vergara, Cristian Blanes, José Manuel |
Editor : Institute of Electrical and Electronics Engineers (IEEE) |
Departamento: Departamentos de la UMH::Ciencia de Materiales, Óptica y Tecnología Electrónica |
Fecha de publicación: 2022 |
URI : https://hdl.handle.net/11000/37994 |
Resumen :
Power distribution using latching current limiters (LCLs) [also known as solid-state power controllers (SSPCs)] is very common for 28- and 50-V bus voltage distribution on European satellite platforms. However, 100-V and even higher voltage distribution platforms generally do not employ the same approach as lower bus voltage platforms since the commonly employed p-MOSFET devices are not well suited for such voltage levels. This work introduces an LCL for 100-V distribution units using a composite power device consisting of a low-voltage p-MOSFET device and a high-voltage, normally-ON silicon carbide junction field effect transistor (SiC JFET). The description of the circuit and the experimental validation using a hypothetical class-2 (2.2–2.8 A), 100-V, LCL is discussed. In addition, in this work, two interesting characteristics are also proposed and validated, and automatic control of the tripping time depending on the overload severity and soft starts for capacitive inrush currents. Robustness and fast reaction, less than 500 ns under short-circuit conditions, have been demonstrated, as well as tight current regulation during overload faults.
|
Palabras clave/Materias: MOSFET circuits current limiters MOSFET silicon carbide JFETs switches resistance |
Área de conocimiento : CDU: Ciencias aplicadas: Ingeniería. Tecnología CDU: Ciencias aplicadas: Ingeniería. Tecnología: Ingeniería mecánica en general. Tecnología nuclear. Electrotecnia. Maquinaria |
Tipo de documento : info:eu-repo/semantics/article |
Derechos de acceso: info:eu-repo/semantics/closedAccess Attribution-NonCommercial-NoDerivatives 4.0 Internacional |
DOI : https://doi.org/10.1109/JESTPE.2022.3165430 |
Publicado en: IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS |
Aparece en las colecciones: Artículos - Ciencia de los materiales, óptica y tecnología electrónica
|