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dc.contributor.authorGarrigós, Ausiàs-
dc.contributor.authorMarroquí, David-
dc.contributor.authorOrts Torres, Carlos-
dc.contributor.authorTorres Vergara, Cristian-
dc.contributor.authorBlanes, José Manuel-
dc.contributor.otherDepartamentos de la UMH::Ciencia de Materiales, Óptica y Tecnología Electrónicaes_ES
dc.date.accessioned2025-11-10T10:33:38Z-
dc.date.available2025-11-10T10:33:38Z-
dc.date.created2022-
dc.identifier.citationIEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICSes_ES
dc.identifier.issn2168-6785-
dc.identifier.issn2168-6777-
dc.identifier.urihttps://hdl.handle.net/11000/37994-
dc.description.abstractPower distribution using latching current limiters (LCLs) [also known as solid-state power controllers (SSPCs)] is very common for 28- and 50-V bus voltage distribution on European satellite platforms. However, 100-V and even higher voltage distribution platforms generally do not employ the same approach as lower bus voltage platforms since the commonly employed p-MOSFET devices are not well suited for such voltage levels. This work introduces an LCL for 100-V distribution units using a composite power device consisting of a low-voltage p-MOSFET device and a high-voltage, normally-ON silicon carbide junction field effect transistor (SiC JFET). The description of the circuit and the experimental validation using a hypothetical class-2 (2.2–2.8 A), 100-V, LCL is discussed. In addition, in this work, two interesting characteristics are also proposed and validated, and automatic control of the tripping time depending on the overload severity and soft starts for capacitive inrush currents. Robustness and fast reaction, less than 500 ns under short-circuit conditions, have been demonstrated, as well as tight current regulation during overload faults.es_ES
dc.formatapplication/pdfes_ES
dc.format.extent10es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)es_ES
dc.relation.ispartofseriesVol. 10es_ES
dc.relation.ispartofseriesnº 5es_ES
dc.rightsinfo:eu-repo/semantics/closedAccesses_ES
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectMOSFET circuitses_ES
dc.subjectcurrent limiterses_ES
dc.subjectMOSFETes_ES
dc.subjectsilicon carbidees_ES
dc.subjectJFETses_ES
dc.subjectswitcheses_ES
dc.subjectresistancees_ES
dc.subject.otherCDU::6 - Ciencias aplicadas::62 - Ingeniería. Tecnologíaes_ES
dc.subject.otherCDU::6 - Ciencias aplicadas::62 - Ingeniería. Tecnología::621 - Ingeniería mecánica en general. Tecnología nuclear. Electrotecnia. Maquinariaes_ES
dc.titleLatching Current Limiter for Space Platform Power Distribution Using a Low-Voltage p-MOSFET and a Normally-ON SiC JFETes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publisherversionhttps://doi.org/10.1109/JESTPE.2022.3165430es_ES
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Artículos - Ciencia de los materiales, óptica y tecnología electrónica


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